IXYS
www.ixys.com
2
06/29/05
IXI848
Absolute Maximum Ratings
Parameter
Rating
Voltage to IN (pin 4)
-0.3V to +45V
Differential Input Voltage (V
SENSE
)
?.4V
Input Current to any pin
?0mA
Operating Ambient Temp Range
-40癈 to +85癈
Operating Junction Temp Range
-40癈 to +125癈
窲A
150癈/W
窲C
40癈/W
Storage Temp Range
-65癈 to +150癈
Lead Temperature (Soldering, 10 sec) +300癈
Absolute Maximum Ratings are stress ratings.
Stresses in excess of these ratings can cause
permanent damage to the device. Functional
operation of the device at these or any other
conditions beyond those indicated in the operational
sections of this data sheet is not implied. Exposure
of the device to the absolute maximum ratings for
an extended period may degrade the device and
affect its reliability.
ESD Warning
ESD (electrostatic discharge) sensitive device. Although the IXI848 feature proprietary ESD protection circuitry, permanent damage
may be sustained if subjected to high energy electrostatic discharges. Proper ESD precautions are recommended to avoid
performance degradation or loss of functionality.
Electrical Characteristics
T
A
= 25癈, V
IN
= 2.7V to 40V, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Operating Voltage
Range
V
IN
2.7
40
V
Supply Current
I
IN
V
IN
= 20V, V
SENSE
= 0V, I
LOAD
= 0A
.065
.130
mA
Full Scale Sense
Voltage
V
SENSE
150
mV
Input Offset
Voltage
V
OS
V
IN
= 12V
-2.0
?.5
2.0
mV
Full Scale
Accuracy
V
SENSE
= 100mV, V
IN
= 12V
T
A
= +25癈
?.7
%
T
A
= +25癈
?.7
V
SENSE
= 100mV
V
IN
= 12V
@ T
A
= -40?to +85癈
?.3
%
T
A
= +25癈
?.8
Total OUT Voltage
Error
(Note 1, Note 2)
V
SENSE
= 100mV
V
IN
= 40V
@ T
A
= -40?to +85癈
?.4
%
T
A
= +25癈
?.5
Gain Accuracy
(Note 2)
V
SENSE
= 20mV
to 100mV
V
IN
= 12V, 40V
@ T
A
= -40?to +85癈
?.1
%
Gain = 10V/V
23
33
43
k&
Gain Setting
Resistance
R
G
V
IN
= 12V
V
SENSE
= 100mV Gain = 50V/V
115
165
215
k&
Note 1: Total OUT voltage error is the sum of gain and offset voltage errors.
Note 2: Production Tested at T
A
=25?/SPAN>C.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
KA331
IC CONVERTER VOLT TO FREQ 8-DIP
LDS9003-002-T2
IC TEMP/PWM CONTROLLER 16WQFN
LM334Z#PBF
IC CURRENT SOURCE TO92-3
LM75AD,112
IC TEMP SENSOR DIGITAL 8-SOIC
LM75BD,112
IC TEMP SENSOR DIGITAL 8-SOIC
LM75BIMX-5+
IC TEMP SENSOR WATCHDOG 8SOIC
LM92CIMX/NOPB
IC SENSOR TEMP/THERM COMP 8-SOIC
LT1123CST#TRPBF
IC REG CTRLR SGL 5V SOT223
相关代理商/技术参数
IXI848S1T/R
功能描述:电流和电力监控器、调节器 2500 Amps 40V RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel
IXI858S1
功能描述:功率驱动器IC 0.12 Amps 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXI858S1T/R
功能描述:功率驱动器IC 0.12 Amps 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXI859S1
功能描述:功率驱动器IC 0.12 Amps 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXI859S1T/R
功能描述:功率驱动器IC 0.12 Amps 20V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXJ611P1
功能描述:IC DRIVER HALF BRIDGE GATE 8PDIP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
IXJ611S1
功能描述:IC DRIVER HALF BRIDGE GATE 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
IXJ611S1T/R
功能描述:功率驱动器IC 0.6 Amps 35V 25 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube